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 MMBT2222A
TRANSISTOR (NPN)
PRODUCT SUMMARY
SOT-23 Plastic-Encapsulate Transistors
SOT-23
FEATURES
Epitaxial planar die construction Complementary PNP Type available (MMBT2907A)
1. BASE 2.EMITTER
MARKING: 1P MECHANCIAL DATA
NA
3.COLLECTOR
Pb-free; RoHS-compliant
MAXIMUM RATINGS (TA=25C unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 75 40 6 600 350 150 -55to+150 Units V V V mA mW
12/04/2007 Rev.1.00
www.SiliconStandard.com
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MMBT2222A
ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time VCE(sat) VBE(sat) Test conditions MIN 75 40 6 10 10 0.1 100 40 42 1 0.3 2.0 1.2 V V MHz 10 25 225 60 nS nS nS nS 300 TYP MAX UNIT V V V
IC= 10A, IE=0 IC= 10mA, IB=0 IE=10A, IC=0 VCB=60V, IE=0 VCE=60V, VBE(off)=3V VEB= 3V,IC=0 VCE=10V, IC=150mA VCE=10V, IC= 0.1mA VCE=10V, IC= 500mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA
nA nA A
0.6 300
fT td tr tS tf
f=100MHz
VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA VCC=30V, IC=150mA IB1=-IB2=15mA
CLASSIFICATION OF hFE(1)
Rank Range L 100-200 H 200-300
12/04/2007 Rev.1.00
www.SiliconStandard.com
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MMBT2222A
TYPICAL CHARACTERISTICS
12/04/2007 Rev.1.00
www.SiliconStandard.com
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MMBT2222A
12/04/2007 Rev.1.00
www.SiliconStandard.com
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MMBT2222A
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
12/04/2007 Rev.1.00
www.SiliconStandard.com
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